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Proceedings Paper

Monolithic InSb Charge Injection Device (CID) Technology
Author(s): D. N. Pocock; C. H. Chen; J. B. Underwood; E. I. Dillard
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Paper Abstract

Because of their simple structure, modest interconnect requirement, and read-out flexibility, charge-injection devices are attractive candidates for the realization of staring infrared focal-plane arrays. We have developed a CID technology in indium antimonide and have fabricated and tested a 32 x 32 imaging array. The CIDs are fabricated on bulk InSb wafers using a process which requires only five photomask steps and no p-n junctions. Read-out is performed without the requirement to operate in the charge-sharing mode. Point overloads do not result in column blooming. Data have been collected on array spatial uniformity, noise performance, and real-time imaging operation. This paper discusses the device fabrication and presents some of the results of the imager evaluation.

Paper Details

Date Published: 20 July 1981
PDF: 8 pages
Proc. SPIE 0267, Staring Infrared Focal Plane Technology, (20 July 1981); doi: 10.1117/12.959909
Show Author Affiliations
D. N. Pocock, Northrop Research & Technology Center (United States)
C. H. Chen, Northrop Research & Technology Center (United States)
J. B. Underwood, Northrop Research & Technology Center (United States)
E. I. Dillard, Northrop Research & Technology Center (United States)

Published in SPIE Proceedings Vol. 0267:
Staring Infrared Focal Plane Technology
David N. Pocock, Editor(s)

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