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Proceedings Paper

HgCdTe Mid-Wavelength Infrared (MWIR) Epitaxial Mosaics For Tactical Applications
Author(s): William E. Tennant
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Paper Abstract

Epitaxial HgCdTe/CdTe, combined with ion implantation technology, has proven ideally suited for proposed photodiode focal plane array applications. State-of-the-art performance planar photodiodes have been fabricated in epitaxial materials of all wavelengths. Important applications of these arrays are in tactical defense missions employing MWIR arrays operated at 77K and near 195K. A critical issue for these devices is stability through the bakeout required for the sealing off of dewar packaging. We report measurements of ion-implanted HgCdTe/CdTe devices and arrays which have broadband spectral response (when illuminated through the CdTe) and high RoA values (~ 11 Ω-cm2 at 195K for λc (50%) = 4.35 μmm, > 106 Ω-cm2 at 77K for λc (50%) = 4.7 μm). Stability of both planar and mesa devices and arrays through various bake conditions has been demonstrated.

Paper Details

Date Published: 20 July 1981
PDF: 5 pages
Proc. SPIE 0267, Staring Infrared Focal Plane Technology, (20 July 1981); doi: 10.1117/12.959907
Show Author Affiliations
William E. Tennant, Rockwell International Science Center (United States)

Published in SPIE Proceedings Vol. 0267:
Staring Infrared Focal Plane Technology
David N. Pocock, Editor(s)

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