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Proceedings Paper

InGaAsP Sources And Detectors For The 1.0-1.7um Wavelength Range
Author(s): Donald J. Channin; Michael Ettenberg
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Paper Abstract

This paper reviews recent progress in the development of InGaAsP optoelectronic devices for fiber optic communications in the 1.0-1.7 μm wavelength bands. With this material system high performance optical sources (both lasers and LEDs) and photodetectors may be prepared. Both vapor phase epitaxy (VPE) and liquid phase epitaxy (LPE) have been used to construct devices. Edge emitting LEDs with spectral widths of only 60 nm and modulation bandwidths exceeding 200 MHz can couple over 100 μW of optical power into 0.55 μm core graded index fiber. Single mode lasers with threshold currents below 100 mA couple more than 1 mW of optical power for long range communication applications. High speed PIN photodetectors with rise times less than 0.5 ns complete the picture. For the first time a complete optoelectronic technology can be developed around a single material system (InGaAsP) for the entire 1.0-1.7 μm spectral range.

Paper Details

Date Published: 28 July 1981
PDF: 9 pages
Proc. SPIE 0266, Infrared Fibers, (28 July 1981); doi: 10.1117/12.959896
Show Author Affiliations
Donald J. Channin, RCA Laboratories (United States)
Michael Ettenberg, RCA Laboratories (United States)

Published in SPIE Proceedings Vol. 0266:
Infrared Fibers
Larry G. DeShazer; Charles Kao, Editor(s)

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