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Proceedings Paper

Planar InP/InGaAs Avalanche Photodiodes Grown By Atmospheric Pressure Metal Organic Vapour Phase Epitaxy.
Author(s): M DA MacBean; P M Rodgers; T G Lynch; M D Learmouth; R H Walling; L Davis; M J Robertson
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Paper Abstract

We compare the performance of high speed planar InP/InGaAs separate absorption, grading and multiplication region avalanche photodiodes where the grading layer consists of a single quaternary layer or a chirped superlattice. The devices are grown by atmospheric pressure metal organic vapour phase epitaxy which has been found to produce good quality, low defect density, uniform material on large area (2") slices. Both types of grading layer are found to suppress the slow component of the avalanche photodiodes pulse response while exhibiting low dark currents (1-10nA @ 0.9Vb). The characteristics of the diodes are shown to be uniform over 2" wafers and suitable for use at bit rates up to at least 2.4Gbaud.

Paper Details

Date Published: 23 February 1989
PDF: 8 pages
Proc. SPIE 0988, Components for Fiber Optic Applications III and Coherent Lightwave Communications, (23 February 1989); doi: 10.1117/12.959743
Show Author Affiliations
M DA MacBean, British Telecom Research Laboratories (U.K.)
P M Rodgers, British Telecom Research Laboratories (U.K.)
T G Lynch, British Telecom Research Laboratories (U.K.)
M D Learmouth, British Telecom Research Laboratories (U.K.)
R H Walling, British Telecom Research Laboratories (U.K.)
L Davis, British Telecom Research Laboratories (U.K.)
M J Robertson, British Telecom Research Laboratories (U.K.)


Published in SPIE Proceedings Vol. 0988:
Components for Fiber Optic Applications III and Coherent Lightwave Communications
Paul M. Kopera; Harish R. Sunak, Editor(s)

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