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Proceedings Paper

High Frequency Silicon Impact Ionization Avalanche Transit Time (IMPATT) Sources Beyond 100 GHz
Author(s): K. Chang; M. Morishita; C. Sun
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Paper Abstract

This paper summarizes the recent state-of-the-art results in silicon IMIPATT sources beyond 100 GHz. A bridge type double-quartz-standoff diode package has been developed and successfully used for frequency up to 255 GHz. Power combining techniques have been demonstrated to incorporate several diodes in a circuit that combines the power efficiently at 140 GHz and 217 GHz. Finally, a phase-locked source has been developed to achieve frequency stabilization at 217 GHz.

Paper Details

Date Published: 27 February 1981
PDF: 6 pages
Proc. SPIE 0259, Millimeter Optics, (27 February 1981); doi: 10.1117/12.959641
Show Author Affiliations
K. Chang, Hughes Aircraft Company (United States)
M. Morishita, Hughes Aircraft Company (United States)
C. Sun, Hughes Aircraft Company (United States)


Published in SPIE Proceedings Vol. 0259:
Millimeter Optics
George A. Tanton, Editor(s)

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