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Proceedings Paper

Preamplifier Noise In Indium Antimonide Detector Systems
Author(s): Paul D. LeVan
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Paper Abstract

Voltage noise measurements have been made at temperatures from 77 to 150 K with three JFET's and a preamplifier which closely resembles one used with InSb photovoltaic detectors. noise minima were detected with the three JFET's at temperatures of 100-115 K, but the level Df voltage noise for two of the three JFET's was found to be below the noise level of InSb detector systems.

Paper Details

Date Published: 3 December 1980
PDF: 5 pages
Proc. SPIE 0246, Contemporary Infrared Sensors and Instruments, (3 December 1980); doi: 10.1117/12.959353
Show Author Affiliations
Paul D. LeVan, University of California (United States)

Published in SPIE Proceedings Vol. 0246:
Contemporary Infrared Sensors and Instruments
Herbert Kaplan; Frederic M. Zweibaum, Editor(s)

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