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Proceedings Paper

Photovoltaic Hg[sub]1-x[/sub]Cd[sub]x[/sub]Te Technology For Elevated Temperature Focal Planes
Author(s): P. LoVecchio; A. K. Sood
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Paper Abstract

Recent advances in Hgl-xCdxTe photodiode technology have resulted in increased detector sensitivity at elevated temperatures over the spectral region from 1-20 μm. Short wavelength photodiodes sensitive to 1-3 pm radiation have room temperature peak detectivities, Dλ, between 4 x 1011 and 8 x 108 cm Hz1/2/W, dependent on peak wavelength, A. Medium wavip 2length photodiodes sensitive to 3-5 im radiation have peak detectivities of 1 x 1011 and 1 x 1012 cm Hz1//W at temperatures of 193 K and 130 K, respectively. Long wavelength photodiodes sensitive to 12 μm radiation have peak detectivities of 5 x 1010 cm Hz /W at 65 K, and 5 x 1011 cm Hz ½/W at 10 K.

Paper Details

Date Published: 18 February 1981
PDF: 7 pages
Proc. SPIE 0244, Mosaic Focal Plane Methodologies I, (18 February 1981); doi: 10.1117/12.959302
Show Author Affiliations
P. LoVecchio, Honeywell Electro-Optics Center (United States)
A. K. Sood, Honeywell Electro-Optics Center (United States)

Published in SPIE Proceedings Vol. 0244:
Mosaic Focal Plane Methodologies I
William S. Chan, Editor(s)

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