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Proceedings Paper

Bismuth-Doped Silicon: An Extrinsic Detector For Long-Wavelength Infrared (LWIR) Applications
Author(s): Christopher M. Parry
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Paper Abstract

Basic properties pertinent to the application of bismuth-doped silicon as an infrared-photoconducting detector material are described. Si:Bi provides a viable n-type alterna-tive to the p-type gallium-doped material that has been more extensively used in the past.

Paper Details

Date Published: 18 February 1981
PDF: 7 pages
Proc. SPIE 0244, Mosaic Focal Plane Methodologies I, (18 February 1981); doi: 10.1117/12.959299
Show Author Affiliations
Christopher M. Parry, Aerojet ElectroSystems Company (United States)

Published in SPIE Proceedings Vol. 0244:
Mosaic Focal Plane Methodologies I
William S. Chan, Editor(s)

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