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Proceedings Paper

Mode-Controlled Galnasp-Inp Long Wavelength Lasers
Author(s): Y. Suematsu; K. Iga; K. Kishino; K. Moriki
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Paper Abstract

GaInAsP/InP lasers with wavelengths of 1.0-1.7µ1-7 have been intensively developed because the optical fibers have their minimum transmission losses in this wavelength region8-9. The transverse mode control obtained in index-guiding structures is very important to im-prove lasing properties, such as modulation linearity, and longitudinal mode behavior as justified experimentally and theoretically. 10-15 Recently single transverse and longitudi-nal mode operation of GaInAsP/InP lasers with index-guiding effect have been realized in various structures.18-28 Newly, 1.6pm wavelength GaInAsP/InP buried heterostructure (BH) lasers have been operated at room temperature in CW condition.21, 22 We also presented, thus far, other types of novel mode-controlled GaInAsP/InP lasers.19,28 In this paper, three types of mode controlled GaInAsP/InP lasers are discussed: (1) buried heterostructure lasers with 1.6μm wavelength, (2) mesa substrate buried hetero-structure (MSB) lasers and (3) terraced substrate (TS) lasers with 1.3-μm wavelength. Specially, the lasing characteristics of 1.6-μm wavelength BH lasers are given. In these de-vices threshold currents as low as 28 mA and differential quantum efficiencys of 43% under room temperature CW condition could be obtained.

Paper Details

Date Published: 25 February 1981
PDF: 7 pages
Proc. SPIE 0239, Guided Wave Optical and Surface Acoustic Wave Devices: Systems and Applications, (25 February 1981); doi: 10.1117/12.959183
Show Author Affiliations
Y. Suematsu, Tokyo Institute of Technology (Japan)
K. Iga, Bell Laboratories (United States)
K. Kishino, Tokyo Institute of Technology (Japan)
K. Moriki, Tokyo Institute of Technology (Japan)

Published in SPIE Proceedings Vol. 0239:
Guided Wave Optical and Surface Acoustic Wave Devices: Systems and Applications
Chen S. Tsai, Editor(s)

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