Share Email Print
cover

Proceedings Paper

Optical Bistability And Transphasor Action In Semiconductors
Author(s): D. A. B. Miller; C. T Seaton; S. D. Smith
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

We report the realisation of optically bistable switching and memory elements, and the transphasor Can all-optical transistor) in simple one element nonlinear Fabry-Perot interferometers made from the semiconductor InSb. These devices, which operate at 5 K and 77 K with mW powers from a cw CO laser between 5 and 6 μm rely on a strongly intensity-dependent refractive index discovered near the bandgap region of InSb and explained by bandgap resonant saturation. Switching speeds are shown to be < 500 ns in these first devices and operation to much shorter timescales is predicted. Operation at room temperature and in other semiconductors at other wavelengths remains a possibility and such devices offer considerable potential for all-optical switching in integrated optics and laser pulse control.

Paper Details

Date Published: 15 May 1981
PDF: 6 pages
Proc. SPIE 0236, 1980 European Conf on Optical Systems and Applications, (15 May 1981); doi: 10.1117/12.959048
Show Author Affiliations
D. A. B. Miller, Heriot-Watt University (United Kingdom)
C. T Seaton, Heriot-Watt University (United Kingdom)
S. D. Smith, Heriot-Watt University (United Kingdom)


Published in SPIE Proceedings Vol. 0236:
1980 European Conf on Optical Systems and Applications
D. J. Kroon, Editor(s)

© SPIE. Terms of Use
Back to Top