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Proceedings Paper

Optical Bistability And Transphasor Action In Semiconductors
Author(s): D. A. B. Miller; C. T Seaton; S. D. Smith
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Paper Abstract

We report the realisation of optically bistable switching and memory elements, and the transphasor Can all-optical transistor) in simple one element nonlinear Fabry-Perot interferometers made from the semiconductor InSb. These devices, which operate at 5 K and 77 K with mW powers from a cw CO laser between 5 and 6 μm rely on a strongly intensity-dependent refractive index discovered near the bandgap region of InSb and explained by bandgap resonant saturation. Switching speeds are shown to be < 500 ns in these first devices and operation to much shorter timescales is predicted. Operation at room temperature and in other semiconductors at other wavelengths remains a possibility and such devices offer considerable potential for all-optical switching in integrated optics and laser pulse control.

Paper Details

Date Published: 15 May 1981
PDF: 6 pages
Proc. SPIE 0236, 1980 European Conf on Optical Systems and Applications, (15 May 1981); doi: 10.1117/12.959048
Show Author Affiliations
D. A. B. Miller, Heriot-Watt University (United Kingdom)
C. T Seaton, Heriot-Watt University (United Kingdom)
S. D. Smith, Heriot-Watt University (United Kingdom)

Published in SPIE Proceedings Vol. 0236:
1980 European Conf on Optical Systems and Applications
D. J. Kroon, Editor(s)

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