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Proceedings Paper

Elevated Temperature n+-p hg0.8Cd0.2-Te Photodiodes For Moderate Bandwidth Infrared Heterodyne Applications
Author(s): J. F. Shanley; C. T. Flanagan; M. B. Reine
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Paper Abstract

This paper presents the results of the first CO2 laser heterodyne measurements performed on boron implanted n+-p Hg0.8Cd0.2Te photodiodes. The measured data shows that this type of device structure is capable, of achieving bandwidths -20 of approximately 475 to 725 MHz and noise equivalent powers of 3.2 x 10-20 at 77 K and 1.0 x 10-19 W/Hz at 145 K.

Paper Details

Date Published: 22 August 1980
PDF: 6 pages
Proc. SPIE 0227, CO2 Laser Devices and Applications, (22 August 1980); doi: 10.1117/12.958754
Show Author Affiliations
J. F. Shanley, Honeywell Electro-Optics Center (United States)
C. T. Flanagan, Honeywell Electro-Optics Center (United States)
M. B. Reine, Honeywell Electro-Optics Center (United States)


Published in SPIE Proceedings Vol. 0227:
CO2 Laser Devices and Applications
Thomas S. Hartwick, Editor(s)

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