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Proceedings Paper

Measurement Of Noise Sources In P-Surface Channel Charge Coupled Device (CCD) Multiplexers For Infrared Focal Plane Arrays
Author(s): W. C. Jenkins; J. M. Killiany; J. A. Modolo
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Paper Abstract

The noise performance of a 32 channel p-surface channel CSD multiplexer for an infrared focal plane array was measured at room temperature and at 160 K. Theoretical calculations were made of the contributions from kTC noise, dark current noise, and interface state trapping noise. The calculated results agree well with the experimental values. The noise of the on-chip source follower output stage was below the 900 rms holes noise floor established for the measuring system by the sample and hold. The calibration of the equipment was checked by comparing the theoretical and measured noise values for optically injected charge carriers. The agreement was better than 10%. We measured 1 to 2 times theoretical kTC noise with the potential equilibration input. The design goal for these devices was a temp3ral noise voltage of 15 µV (3500 rms noise holes) referenced to the input. Cooled to 160 K we measured a noise voltage of 16 µV (3750 rms noise holeq referenced to the input. The spatial or fixed pattern noise was much larger: 12 mV (2.9x10 rms noise holes) referenced to the input.

Paper Details

Date Published: 6 August 1980
PDF: 8 pages
Proc. SPIE 0225, Infrared Image Sensor Technology, (6 August 1980); doi: 10.1117/12.958714
Show Author Affiliations
W. C. Jenkins, Naval Research Laboratory (United States)
J. M. Killiany, Naval Research Laboratory (United States)
J. A. Modolo, Naval Research Laboratory (United States)

Published in SPIE Proceedings Vol. 0225:
Infrared Image Sensor Technology
Esther Krikorian, Editor(s)

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