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Proceedings Paper

Characterization Of In-Plane Wafer Distortion In An N-Channel Metal Oxide Semiconductor (NMOS) Production Process
Author(s): N. H. Tsai; C. N. Ahlquist
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Paper Abstract

This study reports the extent of wafer distortion at different stages in a standard NMOS production process and the residual distortion after linear correction. Measured with Manufacturing Electron Beam Exposure System (MEBES), the statistical normal distributions of the distortion at the edge of a 3 inch wafer are: 0.14 ±0.21 μm (2σ) after oxide and nitride, 0.22 ±0.24 μm after field oxidation, 0.43 ±0.30 μm after polysilicon deposition, 0.44 ±0.37 μm after pyroglass and 0.11 ±0.35 μm after aluminum evaporation. These results show the erratic response of the wafers to the production process: e.g., the wafer expansion ranges from 0.13 μm to 0.73 μm after polysilicon deposition. By applying a linear correction to these distortions wafer by wafer, the ±2σ residual distortion is less than ±0.25 μm, which is the accuracy of this measurement technique.

Paper Details

Date Published: 5 September 1980
PDF: 6 pages
Proc. SPIE 0221, Developments in Semiconductor Microlithography V, (5 September 1980); doi: 10.1117/12.958630
Show Author Affiliations
N. H. Tsai, Intel Corporation (United States)
C. N. Ahlquist, Intel Corporation (United States)

Published in SPIE Proceedings Vol. 0221:
Developments in Semiconductor Microlithography V
James W. Dey, Editor(s)

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