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Proceedings Paper

InAsSb Hybrid Imager Evaluation
Author(s): J. P. Rode
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Paper Abstract

Current research on infrared hybrid focal planes is directed toward devices in which detection occurs in a p-n junction formed in an intrinsic narrow energy bandgap semiconductor, and signal processing is accomplished in a Si CCD multiplexer which is electrically interfaced to the detector array. A hybrid array such as this, where the detector format is a 32 x 32 matrix, has been fabricated. The active material is backside-illuminated InAsSb which has been planar processed and fully passivated. The cutoff wavelength is 4.0 μm at the operating temperature of 77K. The CCD is four phase with a two level polysilicon gate structure. The signal input is via direct injection with an option for dc suppression. Operation of the focal plane in a staring mode that uses dc suppression is discussed. Data derived from the video output is presented; this includes responsivity and detectivity. Off focal plane non-uniformity compensation is also discussed. Displays of thermal images utilizing processed data from the hybrid focal plane array will be shown.

Paper Details

Date Published: 7 May 1980
PDF: 5 pages
Proc. SPIE 0217, Advances in Focal Plane Technology, (7 May 1980); doi: 10.1117/12.958496
Show Author Affiliations
J. P. Rode, Rockwell International Science Center (United States)

Published in SPIE Proceedings Vol. 0217:
Advances in Focal Plane Technology
William S. Chan, Editor(s)

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