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Proceedings Paper

Fabrication And Evaluation Of A Monolithic InSb CID
Author(s): David N. Pocock; Ichiro Kasai; David E. Nuttall; Chih-Hong Chen; Robert N. Ting
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Paper Abstract

The fabrication of a monolithic indium-antimonide 32 x 32 CID array applicable for staring infrared imaging sensors is presented with preliminary characterization results. The basic MIS technology utilizes low-temperature CVD to deposit insulating layers of nitrogen-doped Si02 on bulk indium-antimonide substrates. A two-level insulator/two-level metal structure results in a simple four-mask process flow for the CID array. Completed arrays demonstrate acceptable dark currents that result in 20 ms storage times at 77K and are completely photocurrent dominated for typical tactical background photon flux densities in the 1015 to 1016 photons/cm2s range. Charge transfer experiments indicate acceptable transfer efficiencies for CID operation. Plans to demonstrate thermal imagery are presented.

Paper Details

Date Published: 7 May 1980
PDF: 11 pages
Proc. SPIE 0217, Advances in Focal Plane Technology, (7 May 1980); doi: 10.1117/12.958485
Show Author Affiliations
David N. Pocock, Northrop Research & Technology Center (United States)
Ichiro Kasai, Northrop Research & Technology Center (United States)
David E. Nuttall, Northrop Research & Technology Center (United States)
Chih-Hong Chen, Northrop Research & Technology Center (United States)
Robert N. Ting, Northrop Research & Technology Center (United States)

Published in SPIE Proceedings Vol. 0217:
Advances in Focal Plane Technology
William S. Chan, Editor(s)

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