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Proceedings Paper

Feasibility Study Of Charge Transfer Devices In HgCdTe/CdTe Heterostructures
Author(s): M. E. Kim; G. M. Williams; S H. Shin; M. Chu; J. Cheung; J C. Kim; C. C. Wang
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Paper Abstract

Advances in epitaxial hgCdTe/CdTe material technology such as high crystalline quality and surface morphology have motivated the study of MIS devices and the current development of CCDs in these heterostructures. Results of MIS device studies in n-and p-type HgCdTe/CdTe structures are presented. Annealing in Hg atmosphere was used to obtain n 1014 cm-3 and p 5 x 1015 cm3. A native oxide passivation used in conjunction with ZnS has yielded high-integrity MIS interfaces for n-type epilayers. For p-type HgCdTe/CdTe, n+/p junction technology and ZnS passivation have been used to demonstrate enhancement-mode MISFETs. These results indicate the feasibility of MISCCDs in HgCdTe/CdTe structures, with particularly attractive features in n-channel (p-type) devices.

Paper Details

Date Published: 7 May 1980
PDF: 3 pages
Proc. SPIE 0217, Advances in Focal Plane Technology, (7 May 1980); doi: 10.1117/12.958481
Show Author Affiliations
M. E. Kim, Rockwell International Science Center (United States)
G. M. Williams, Rockwell International Science Center (United States)
S H. Shin, Rockwell International Science Center (United States)
M. Chu, Rockwell International Science Center (United States)
J. Cheung, Rockwell International Science Center (United States)
J C. Kim, Rockwell International Science Center (United States)
C. C. Wang, Rockwell International Science Center (United States)


Published in SPIE Proceedings Vol. 0217:
Advances in Focal Plane Technology
William S. Chan, Editor(s)

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