Share Email Print
cover

Proceedings Paper

HgCdTe Charge-Coupled Detectors (CCD)
Author(s): S. R. Borrello; R. A. Chapman; A. Simmons; J. D. Beck; M. A. Kinch; C. G. Roberts
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

CCD shift registers have been investigated in 4.4 pm HgCdTe for time delay and integrate (TDI) enhancement of responsivity and signal to noise ratio and for multiplexing a number of TDI shift registers. CCD linear arrays and area arrays have been operated from 77K to 140K cooling and from 50 kHz to above 1 MHz. Charge transfer efficiency (CTE) has been measured to 0.9999 on a 32 stage four phase p channel device. Infrared sensitivity measure-ments show, D* values above 1012 cmHz1/2/W for full TDI enhancement of32. TDI has been demonstrated utilizing focused laser illumination scanned synchronously with the clocked charge. Sensitivity and noise analyses have been made to show limits of detection for multiplexed arrays.

Paper Details

Date Published: 7 May 1980
PDF: 8 pages
Proc. SPIE 0217, Advances in Focal Plane Technology, (7 May 1980); doi: 10.1117/12.958480
Show Author Affiliations
S. R. Borrello, Texas Instruments Incorporated (United States)
R. A. Chapman, Texas Instruments Incorporated (United States)
A. Simmons, Texas Instruments Incorporated (United States)
J. D. Beck, Texas Instruments Incorporated (United States)
M. A. Kinch, Texas Instruments Incorporated (United States)
C. G. Roberts, Texas Instruments Incorporated (United States)


Published in SPIE Proceedings Vol. 0217:
Advances in Focal Plane Technology
William S. Chan, Editor(s)

© SPIE. Terms of Use
Back to Top