Trapping of electromagnetic energy in an optical waveguide is a good condition for second harmonic generation, owing to the energy confinement along the guided beam. However, this advantage is drastically reduced by the difficulties for phase-matching obtention, and by the small overlap between non linear polarization and harmonic wave. For the case of Ga As infrared waveguides (fundamental vacuum wavelength = 10.6 μm), we study a solution based on an extension of Ito and Inaba's suggestion for waveguides in the visible range. Basically the deposition of an amorphous Silicon film upon the Ga As guide breaks harmonic guided wave and non linear induced polarization orthogonality allowing thus an overlapping integral enhancement of two orders of magnitude.

Date Published: 23 May 1980
PDF: 4 pages
Proc. SPIE 0213, Optics and Photonics Applied to Communication and Processing, (23 May 1980); doi: 10.1117/12.958392

Published in SPIE Proceedings Vol. 0213:
Optics and Photonics Applied to Communication and Processing
Michel H. Grosmann; Patrick Meyrueis, Editor(s)