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Proceedings Paper

Performance Efficiency Of InSb Charge Injection Devices (CID)
Author(s): M. D. Gibbons; J. M. Swab; W. E. Davern; R. W. Aldrich
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Paper Abstract

This paper describes the factors governing the Performance Efficiency (PE) of Indium Antimonide Charge Injection Devices (CID) arrays. Factors influencing PE in both line and area arrays are considered and compared to experimental results. An important factor re-lates to the signal charge loss of a dual gate array operating in the charge sharing mode (CSM). The chief advantages of the CSM are that it overcomes charge transfer problems that might be present in practical arrays, and it is believed to be radiation damage resistant. The chief limitation is that only the charge residing under the sensing gate of the dual gate site is read out. This loss can be lessened by designing the sensing gate to be a large fraction of the total storage area. Performance data of lx32, lx64 line arrays, 24x16 and 32x32 dual gate area arrays are presented. Line arrays FE up to 56 percent, responsivity variation below 10 percent, and D* of about 3x1011 cm HZ½/watt have been measured.

Paper Details

Date Published: 12 December 1979
PDF: 8 pages
Proc. SPIE 0203, Recent Advances in TV Sensors and Systems, (12 December 1979); doi: 10.1117/12.958137
Show Author Affiliations
M. D. Gibbons, General Electric Company (United States)
J. M. Swab, General Electric Company (United States)
W. E. Davern, General Electric Company (United States)
R. W. Aldrich, General Electric Company (United States)

Published in SPIE Proceedings Vol. 0203:
Recent Advances in TV Sensors and Systems
Charles Freeman, Editor(s)

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