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Proceedings Paper

GaAs MOS Structures
Author(s): Edward R. Blazejewski; William A. Gutierrez; Herbert L. Wilson; Edward M. Yee
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Paper Abstract

Anodized Ta203/native oxide/n-type (111)B GaAs MOS devices are evaluated using variable frequency capac-itance and conductance measurements. Total movement of the Fermi level is seen restricted to .42 eV by an interface state distribution having a minimum density of 3.5 X 1012 eV-1 cm-2 at .84 eV from the conduction band. The anomalous frequency dispersion of the accumulation capacitance, lack of strong inversion and loss mechanisms are discussed. Pulsed deep depletion characteristics and long storage times are observed. Due to the chemically stable nature of the anodized Ta overlayer, linear array burried channel GaAs MOS charge transfer devices were fabricated.

Paper Details

Date Published: 12 December 1979
PDF: 6 pages
Proc. SPIE 0203, Recent Advances in TV Sensors and Systems, (12 December 1979); doi: 10.1117/12.958136
Show Author Affiliations
Edward R. Blazejewski, Night Vision and Electro-Optics Laboratory (United States)
William A. Gutierrez, Night Vision and Electro-Optics Laboratory (United States)
Herbert L. Wilson, Night Vision and Electro-Optics Laboratory (United States)
Edward M. Yee, Night Vision and Electro-Optics Laboratory (United States)


Published in SPIE Proceedings Vol. 0203:
Recent Advances in TV Sensors and Systems
Charles Freeman, Editor(s)

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