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Proceedings Paper

CW Laser Annealing Of Ion-Implanted Silicon
Author(s): L. D. Hess; R. A. Forber; S. A. Kokorowski; G. L. Olson
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Paper Abstract

Experimental measurements and theoretical calculations of recrystallization induced by single laser scans over amorphous silicon are reported and quantitatively compared. The details of laser-induced crystal regrowth of high dose ion implanted silicon studied over a wide range of experimental parameters are accurately predicted from three dimensional thermal transport considerations and solid phase epitaxial crystal growth. Best agreement between theory and experiment is obtained with the value of 2.24 eV for the activation energy of recrystallization.

Paper Details

Date Published: 24 January 1980
PDF: 5 pages
Proc. SPIE 0198, Laser Applications in Materials Processing, (24 January 1980); doi: 10.1117/12.958017
Show Author Affiliations
L. D. Hess, Hughes Research Laboratories (United States)
R. A. Forber, Hughes Research Laboratories (United States)
S. A. Kokorowski, Hughes Research Laboratories (United States)
G. L. Olson, Hughes Research Laboratories (United States)

Published in SPIE Proceedings Vol. 0198:
Laser Applications in Materials Processing
John F. Ready, Editor(s)

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