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Proceedings Paper

Applications Of Scanning Continuous Wave (CW) And Pulsed Lasers In Silicon Technology
Author(s): T. W. Sigmon; J. F. Gibbons
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Paper Abstract

Both pulsed and scanning cw lasers operating at wavelengths in the range 0.5-1.06 μm can be used as a method to rapidly heat the surface and underlying bulk of a semiconductor material to a precisely controlled temperature up to melting. As a result, lasers can be utilized to anneal ion-implanted layers, reduce fixed interface charge of deposited oxide films, grow surface oxides, react metal/silicon layers to form silicides and improve and control the electrical properties of deposited silicon films.

Paper Details

Date Published: 24 January 1980
PDF: 5 pages
Proc. SPIE 0198, Laser Applications in Materials Processing, (24 January 1980); doi: 10.1117/12.958016
Show Author Affiliations
T. W. Sigmon, Stanford Electronics Laboratories (United States)
J. F. Gibbons, Stanford Electronics Laboratories (United States)

Published in SPIE Proceedings Vol. 0198:
Laser Applications in Materials Processing
John F. Ready, Editor(s)

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