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Proceedings Paper

Dynamics Of Laser Annealing
Author(s): D. H. Auston; J. A. Golovchenko; T. N. C. Venkatesan
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Paper Abstract

The physical mechanisms responsible for the annealing of ion implanted semiconductors for a wide range of materials and annealing conditions have been identified through the use of in-situ dynamical measurements of optical properties. These measurements combined with post-anneal sample characterization, i.e., channeling, electrical measurements, etc., lead to the identification of two different annealing mechanisms. For the case of Q-switched lasers a liquid phase epitaxial regrowth of the damaged layer is indicated. For c.w. lasers solid phase epitaxial regrowth can occur.

Paper Details

Date Published: 24 January 1980
PDF: 7 pages
Proc. SPIE 0198, Laser Applications in Materials Processing, (24 January 1980); doi: 10.1117/12.958015
Show Author Affiliations
D. H. Auston, Bell Laboratories (United States)
J. A. Golovchenko, Bell Laboratories (United States)
T. N. C. Venkatesan, Bell Laboratories (United States)

Published in SPIE Proceedings Vol. 0198:
Laser Applications in Materials Processing
John F. Ready, Editor(s)

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