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Proceedings Paper

Computer Simulation Of Pulsed Laser And Electron Beam Annealing And Doping Of Semiconductors
Author(s): R. J. Collins; W. T. Peria
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Paper Abstract

A brief comparison of heating with pulsed electron bemas and lasers for the annealing of ion implanted semiconductors based on a computer simulation is given. The advantage of monoenergetic electrons is pointed out, and the use of such beam for distribution of impurities is suggested.

Paper Details

Date Published: 24 January 1980
PDF: 8 pages
Proc. SPIE 0198, Laser Applications in Materials Processing, (24 January 1980); doi: 10.1117/12.958014
Show Author Affiliations
R. J. Collins, University of Minnesota (United States)
W. T. Peria, University of Minnesota (United States)

Published in SPIE Proceedings Vol. 0198:
Laser Applications in Materials Processing
John F. Ready, Editor(s)

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