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Proceedings Paper

Theoretical Analysis Of Thermal And Mass Transport During Laser Annealing
Author(s): R. F. Wood
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Paper Abstract

The radiation from high-power, Q-switched lasers has been used recently in semiconductor research to 1) anneal the lattice damage caused by ion implantation, 2) diffuse surface-deposited dopant films, 3) recrystallize doped amorphous films deposited on substrates, and 4) remove precipitates present after conventional high-temperature, long-time, dopant diffusion. All of these phenomena can be understood in terms of a model based on macroscopic diffusion equations for heat and mass transport, cast in a finite-difference form to allow for the temperature- and spatial-dependence of the thermal conductivity, absorption coefficient of the laser radiation, and other quantities. Results of calculations with the model show that the near-surface region of the sample melts and stays molten for a time of the order of 10-7 secs during which dopant diffusion in the liquid state can explain the major features of the experimental results. Detailed results for arsenic-implanted silicon show the importance of non-equilibrium segregation effects.

Paper Details

Date Published: 24 January 1980
PDF: 9 pages
Proc. SPIE 0198, Laser Applications in Materials Processing, (24 January 1980); doi: 10.1117/12.958013
Show Author Affiliations
R. F. Wood, Oak Ridge National Laboratory (United States)


Published in SPIE Proceedings Vol. 0198:
Laser Applications in Materials Processing
John F. Ready, Editor(s)

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