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Proceedings Paper

Liquid Phase Epitaxial PbSnTe And The Performance Of The Detector
Author(s): Wu Yangxian
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Paper Abstract

The results of liquid phase epitaxially grown single crystal Pb0,8Sn0,2Te films and the hetero-epitaxially grown PbTe/Pb0,8Sn0,2Te are reported. The substrates used are cut from' the vapor-phase transportation grown single crystal Pb0,8Sn0.2Te with (100) orientation. PbSnTe films epitaxially grown with relatively low temperature on these substrates exhibit peak responte in the 10-10.6 um range. λς≤ 12um. Typical heterojunction detectors have a D+(500K,1000,1) of 2-4x109cmHz ½w-1. it is now limited by the noise of the preamplifier. The I-V characteristic of the heterojunction is analysed. The zero bias resistance is measured to be in the range of 20-80 ohms, the quantum efficiency n to be approximately 30%. There are some generation-recombination current contributions to the diode current.

Paper Details

Date Published: 17 December 1979
PDF: 5 pages
Proc. SPIE 0197, Modern Utilization of Infrared Technology V, (17 December 1979); doi: 10.1117/12.957983
Show Author Affiliations
Wu Yangxian, North China Research Institute of Electro-Optics (China)

Published in SPIE Proceedings Vol. 0197:
Modern Utilization of Infrared Technology V
Irving J. Spiro, Editor(s)

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