Share Email Print
cover

Proceedings Paper

Thin-Film Scintillators For Extended Ultraviolet (UV) Response Silicon Detectors
Author(s): Walter Viehmann
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

The preparation and radiometric properties of silicon detectors coated with fluorescent thin films are described. The films are deposited from solutions of clear plastics, such as acrylic resins, polyvinyl toluene or polystyrene, and of organic laser dyes in a common solvent. They are optically clear, mechanically and chemically stable, yet easily applied and removed. Multiple doped films of a few μm thickness exhibit broadband absorption from < 250 nm to ~ 450 nm and narrow band emissions with peaks ranging from 380 nm to 600 nm. Internal quantum efficiencies are close to 100 percent and fluorescence decay times are in the nanosecond range. When deposited on optically denser media, a large fraction of the fluorescent emission is trapped in the substrate. Silicon photodiodes coated with multiple doped films exhibit high external quantum efficiencies and virtually flat photon response in the near uv.

Paper Details

Date Published: 15 November 1979
PDF: 6 pages
Proc. SPIE 0196, Measurements of Optical Radiations, (15 November 1979); doi: 10.1117/12.957960
Show Author Affiliations
Walter Viehmann, NASA Goddard Space Flight Center (United States)


Published in SPIE Proceedings Vol. 0196:
Measurements of Optical Radiations
Harold P. Field; Edward F. Zalewski; Frederic M. Zweibaum, Editor(s)

© SPIE. Terms of Use
Back to Top