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Proceedings Paper

CMOS/SOS LSI For Real-Time Signal Processing
Author(s): Ross M. Orndorff; Daryl T. Butcher
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Paper Abstract

"These are interesting times in which we live" is an addage we have all heard oft repeated, but it has never been more true than in the technology explosion presently permeating the semiconductor industry. Rapid advances in processing, photolithography, and computeraided design (CAD) techniques are making possible semiconductor devices with performance characteristics heretofore considered impossible. This paper reviews some of the outstanding performance characteristics achieved with silicon-gate complementary-MOS (CMOS) fabricated on a sapphire substrate (CMOS/SOS). Three CMOS/SOS LSI devices, recently developed at the Electronics Research Center, are reviewed to demonstrate the strengths of the Rockwell technology. A 12-bit analog/digital (A/D) converter device(1) highlights the analog capabilities of the 4-micron technology. High-speed digital characteristics of the 3-micron technology are demonstrated by a CMOS/SOS frequency synthesizer.( 293) Tight packaging densities (1 square mil per transistor), high speed (800 picoseconds), low-power (0.2 picojoules) characteristics provided by the 2- micron technology are demonstrated by the Viterbi LSI device.( 4) CAD capability( S) greatly facilitating LSI design, analysis, layout and layout verification is also discussed briefly. Finally, the plans for both production and continued development of the CMOS/SOS technology are presented.

Paper Details

Date Published: 21 September 1979
PDF: 7 pages
Proc. SPIE 0180, Real-Time Signal Processing II, (21 September 1979); doi: 10.1117/12.957330
Show Author Affiliations
Ross M. Orndorff, Rockwell International (United States)
Daryl T. Butcher, Rockwell International (United States)


Published in SPIE Proceedings Vol. 0180:
Real-Time Signal Processing II
Tien F. Tao, Editor(s)

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