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Proceedings Paper

Monolithic Surface Acoustic Wave (SAW) Charge Transfer Device And Its Applications
Author(s): N. A. Papanicolaou; H. C. Lin; H. F. Benz
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Paper Abstract

Surface acoustic waves excited in a Si-SiO2-ZnO layered structure can produce a traveling electric field in the silicon substrate. Charges stored in the traveling potential wells can be transferred at high speed and density and with less complexity than conventional charge coupled devices. The monolithic structure under investigation for the SAW-charge transfer device consists of a silicon substrate, a thin silicon dioxide insulating layer on top of which a ZnO piezoelectric film is deposited by sputtering. The surface acoustic waves are excited by interdigital transducers. The signal charge is injected into traveling potential wells that travel with the velocity of sound. The presence of a thin shorting plate placed on the ZnO film, over the charge transfer region can enhance the acoustoelectric potential at the Si-SiO2 interface, thus resulting in a more efficient device. An 80 MHz, 2μ-second SAW-CCD has successfully been fabricated. An optical application utilizing such a structure is proposed. It can be used in place of a conventional interline transfer design. Surface acoustic waves are launched before the charges are transferred from the sensor region to the transport region.

Paper Details

Date Published: 20 August 1979
PDF: 4 pages
Proc. SPIE 0178, Smart Sensors, (20 August 1979); doi: 10.1117/12.957286
Show Author Affiliations
N. A. Papanicolaou, University of Maryland (United States)
H. C. Lin, University of Maryland (United States)
H. F. Benz, NASA Langley Research Center (United States)

Published in SPIE Proceedings Vol. 0178:
Smart Sensors
David F. Barbe, Editor(s)

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