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Proceedings Paper

III-V Heterostructure Devices For Integrated Optics
Author(s): James L. Merz
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Paper Abstract

A review is given of recent progress in the development of integrated optical circuits involving the Al Ga1-x As/GaAs double heterostructure system. Various devices utilizing x. periodic corrugations or gratings are described briefly, whereas alternate attempts to fabricate optical circuits by wet chemical etching are discussed in more detail. The current trend to explore other III-V compounds is considered, with emphasis on the quaternary system GaxIni-xPyAs1-y Lattic matching of this quaternary to InP results in long wave-length emission, suitable for use with present optical fibers. A number of reasons are also given for increased investigation of this quaternary lattice-matched to GaAs.

Paper Details

Date Published: 26 July 1979
PDF: 8 pages
Proc. SPIE 0176, Guided Wave Optical Systems and Devices II, (26 July 1979); doi: 10.1117/12.957225
Show Author Affiliations
James L. Merz, University of California (United States)

Published in SPIE Proceedings Vol. 0176:
Guided Wave Optical Systems and Devices II
Elsa M. Garmire, Editor(s)

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