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Proceedings Paper

Integrated Optics Techniques Applied To GaAs Lasers
Author(s): R. D. Burnham; D. R. Scifres; W. Streifer
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Paper Abstract

In this paper we discuss three integrated devices using GaAs/GaAlAs DH injection lasers. The first of these achieves angular scanning by adjusting the current levels between two closely spaced stripe contacts, thereby creating an asymmetric gain/refractive index through which the laser beam propagates. A deflection of the peak laser beam intensity of ±14' along the p-n junction is observed. Another structure involves operation of a branching waveguide stripe-geometry laser. This structure produces interference fringes in the far field which are spatially scanned by electrically varying the optical phase in each leg of the branching waveguide in a manner analogous to microwave phased array radar. The last structure consisted of 10 conducting 3 om stripe contacts on centers separated by D and coupled by curved waveguide sections. This device produces a high-power, phase-locked beam of small angular divergence parallel to the p-n junction Data from four stripe geometries with D ranging from 10 Um to 27.4 im are compared and overall optimal characteristics are shown to occur for D = 101.1. In that case, threshold current densities are comparable to those of solid area laser, differential quantum efficiency is approximately 60%, and maximum observed pulsed power per facet is on the order of 1 watt.

Paper Details

Date Published: 26 July 1979
PDF: 5 pages
Proc. SPIE 0176, Guided Wave Optical Systems and Devices II, (26 July 1979); doi: 10.1117/12.957224
Show Author Affiliations
R. D. Burnham, Xerox Palo Alto Research Center (United States)
D. R. Scifres, Xerox Palo Alto Research Center (United States)
W. Streifer, Xerox Palo Alto Research Center (United States)


Published in SPIE Proceedings Vol. 0176:
Guided Wave Optical Systems and Devices II
Elsa M. Garmire, Editor(s)

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