Share Email Print

Proceedings Paper

Influence Of Partial Coherence On Projection Printing
Author(s): M. M. O'Toole; A. R. Neureuther
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

A computer program for the Simulation And Modeling of Profiles for Lithography and Etching (SAMPLE) is used to explore the effects of partially coherent mask illumination on the image intensity distribution and on the developed resist profiles. Features of the image are discussed with respect to the degree of illumination coherence and to focus error. The impact of the image features on line-edge profiles in resist is explored via a resist development simulation. The minimum (toe) intensity of the image of narrow lines is defined and found to be an important factor in the control of resist linewidth. Simulated resist profiles of a typical mask pattern indicate a reasonable value of .7 for the partial coherence parameter o.

Paper Details

Date Published: 17 July 1979
PDF: 6 pages
Proc. SPIE 0174, Developments in Semiconductor Microlithography IV, (17 July 1979); doi: 10.1117/12.957174
Show Author Affiliations
M. M. O'Toole, University of California (United States)
A. R. Neureuther, University of California (United States)

Published in SPIE Proceedings Vol. 0174:
Developments in Semiconductor Microlithography IV
James W. Dey, Editor(s)

© SPIE. Terms of Use
Back to Top