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Proceedings Paper

Use Of 436 NM Optical Step-And-Repeat Imaging For Wafer Fabrication
Author(s): Geoffrey R.M. Thomas; Harry L. Coleman; Mike Lanahan
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Paper Abstract

The use of a 10X reduction step and repeat system to produce 1 to gum geometries over a 14.5mm diameter image for high density semiconductor wafer fabrication is presented. The impact of standing wave patterns on the development properties of photoresists are examined for substrates of various reflectivity, and efforts to minimize these effects described. Data on alignment accuracies and critical dimension tolerances is also included.

Paper Details

Date Published: 17 July 1979
PDF: 7 pages
Proc. SPIE 0174, Developments in Semiconductor Microlithography IV, (17 July 1979); doi: 10.1117/12.957173
Show Author Affiliations
Geoffrey R.M. Thomas, National Semiconductor Corporation (United States)
Harry L. Coleman, National Semiconductor Corporation (United States)
Mike Lanahan, National Semiconductor Corporation (United States)


Published in SPIE Proceedings Vol. 0174:
Developments in Semiconductor Microlithography IV
James W. Dey, Editor(s)

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