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Proceedings Paper

Scanning Laser Image Generation As A Diagnostic Tool For Semiconductor Materials And Circuits
Author(s): D. L. Parker
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Paper Abstract

This paper describes some of the potential applications of scanning laser generated images for use in material characterization, process control, and failure analysis in semi-conductor device manufacturing. Two applications are described in detail: CMOS latchup site identification and photoluminescence imaging of defects in gallium arsenide. Laser scanning is shown to be capable of identifying every site in a CMOS circuit which will sustain latchup under given bias conditions and identifying the relative sensitivities of each site. Photoluminescence imaging is shown to be capable of identifying the locations of dislocation clusters in gallium arsenide. These relatively inexpensive nondestructive tech-niques may prove to be powerful analytic tools in semiconductor device manufacturing.

Paper Details

Date Published: 7 July 1986
PDF: 6 pages
Proc. SPIE 0611, Laser Processing of Semiconductors & Hybrids, (7 July 1986); doi: 10.1117/12.956414
Show Author Affiliations
D. L. Parker, Texas A&M University (United States)


Published in SPIE Proceedings Vol. 0611:
Laser Processing of Semiconductors & Hybrids
Edward J. Swenson, Editor(s)

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