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Proceedings Paper

Large Area Laser-Assisted Etching of Electronic Materials
Author(s): Peter D. Brewer; R. M. Osgood
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Paper Abstract

The use of laser assisted-chemistry for dry etching of electronic materials is described. Emphasis is placed on the use of laser-assisted reactions for large area processing. Review of the current technology is given for large area masked etching, UV-projection etching, and laser assisted reactive ion etching (RIE), and plasma etching.

Paper Details

Date Published: 7 July 1986
PDF: 8 pages
Proc. SPIE 0611, Laser Processing of Semiconductors & Hybrids, (7 July 1986); doi: 10.1117/12.956412
Show Author Affiliations
Peter D. Brewer, Hughes Research Laboratories (United States)
R. M. Osgood, Columbia University (United States)

Published in SPIE Proceedings Vol. 0611:
Laser Processing of Semiconductors & Hybrids
Edward J. Swenson, Editor(s)

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