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Proceedings Paper

Laser-Plasma Source For Pulsed X-Ray Lithography
Author(s): D. J. Nagel; R. R. Whitlock; J. R. Greig; R. E. Pechacek; M. C. Peckerar
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Paper Abstract

The exposure of an x-ray resist by radiation from laser-heated plasmas was recently demonstrated. Single-shot submicrosecond exposures with a very favorable x-ray spectrum are possible. In order to reduce the cost of a laser-plasma x-ray lithography system, it is desirable to maximize the intensity in the soft (1 to about 3 keV) range. The x-ray output of laser-plasmas depends on laser pulse parameters (wavelength, pulse shape and energy), the focal conditions, and the target composition and geometry. Laser-plasma x-ray characteristics and their sensitivity to experimental parameters are reviewed in this paper. Presently available information indicates that a Nd:glass laser having pulse width in or near the 1-10 nsec range with at least 500 J of energy should be adequate for practical single-shot x-ray lithography.

Paper Details

Date Published: 6 September 1978
PDF: 8 pages
Proc. SPIE 0135, Developments in Semiconductor Microlithography III, (6 September 1978); doi: 10.1117/12.956112
Show Author Affiliations
D. J. Nagel, Naval Research Laboratory (United States)
R. R. Whitlock, Naval Research Laboratory (United States)
J. R. Greig, Naval Research Laboratory (United States)
R. E. Pechacek, Naval Research Laboratory (United States)
M. C. Peckerar, Westinghouse Electric Corporation (United States)

Published in SPIE Proceedings Vol. 0135:
Developments in Semiconductor Microlithography III
Dino R. Ciarlo; James W. Dey; Ken Hoeppner, Editor(s)

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