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Proceedings Paper

Infrared Photodiode Optimization For Higher Temperature Operation
Author(s): S. R. Borrello; M. A. Kinch
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Paper Abstract

The performance of infrared sensitive photodiodes may be improved at higher operating temperatures by a reduction of excess volume in which minority carriers are thermally gen-erated within a diffusion length of the junction. This technique requires surface recombi-nation velocities typically less than 100 cm/sec. Calculations for HgCdTe indicate a peak D* above 1.5 x 1011 cm Hz½/w may be obtained at 190 K for a 5.0 µm cut-off wavelength.

Paper Details

Date Published: 6 June 1978
PDF: 9 pages
Proc. SPIE 0132, Utilization of Infrared Detectors, (6 June 1978); doi: 10.1117/12.956053
Show Author Affiliations
S. R. Borrello, Texas Instruments (United States)
M. A. Kinch, Texas Instruments (United States)


Published in SPIE Proceedings Vol. 0132:
Utilization of Infrared Detectors
Irving J. Spiro, Editor(s)

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