Share Email Print

Proceedings Paper

Infrared Solid State Imaging Arrays
Author(s): Richard D. Nelson
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Possible system applications of Infrared Charge Transfer Devices are reviewed. It is found that this device technology can have a very significant systems impact. Analyses are performed to calculate the quantum efficiency, quantum yield, frequency response, photoconductive gain, operating temperature, noise and the distinction between parallel and transverse bias configurations of silicon detectors. Tables of silicon detector properties are included. Approaches to the interface circuitry which couples the detectors and the CTD multiplexer are examined. Examples of existing low background and high background IRCTD detector arrays are given.

Paper Details

Date Published: 9 November 1977
PDF: 11 pages
Proc. SPIE 0124, Modern Utilization of Infrared Technology III, (9 November 1977); doi: 10.1117/12.955847
Show Author Affiliations
Richard D. Nelson, Rockwell International (United States)

Published in SPIE Proceedings Vol. 0124:
Modern Utilization of Infrared Technology III
Irving J. Spiro, Editor(s)

© SPIE. Terms of Use
Back to Top