Share Email Print
cover

Proceedings Paper

Electric Field And Photocurrent Considerations In Photorefractive Memory Materials
Author(s): T. A. Rabson; D. M. Kim; F. K. Tittel
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

High density storage of data in photosensitive electrooptic crystals has been achieved. One of the crystals with the highest writing sensitivity is LiNb03 doped with iron. A key factor in its high sensitivity involves the nature of the charge transport in the crystal. A series of measurements has been carried out to study the charge transport by photocurrent measurements and electrooptic measurements. The two techniques are shown to give consistent results. When described in terms of an equivalent internal electric field a dependence on light intensity is required.

Paper Details

Date Published: 13 December 1977
PDF: 7 pages
Proc. SPIE 0123, Optical Storage Materials and Methods, (13 December 1977); doi: 10.1117/12.955807
Show Author Affiliations
T. A. Rabson, Rice University (United States)
D. M. Kim, Rice University (United States)
F. K. Tittel, Rice University (United States)


Published in SPIE Proceedings Vol. 0123:
Optical Storage Materials and Methods
Leo Beiser; Di Chen, Editor(s)

© SPIE. Terms of Use
Back to Top