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Proceedings Paper

Silicon Infrared Charge Transfer Devices
Author(s): Richard D. Nelson
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Paper Abstract

Possible system applications of Infrared Charge Transfer Devices are reviewed. It is found that this device technology can have a very significant systems impact. Analyses are performed to calculate the quantum efficiency, quantum yield, frequency response, photoconductive gain, operating temperature, noise and the distinction between parallel and transverse bias configurations of silicon detectors. Tables of silicon detector properties are included. Approaches to the interface circuitry which couples the detectors and the CTD multiplexer are examined. Examples of existing low background and high background IRCTD detector arrays are given.

Paper Details

Date Published: 15 December 1977
PDF: 12 pages
Proc. SPIE 0116, Solid-State Imaging Devices, (15 December 1977); doi: 10.1117/12.955639
Show Author Affiliations
Richard D. Nelson, Rockwell International (United States)


Published in SPIE Proceedings Vol. 0116:
Solid-State Imaging Devices
Jim Campbell, Editor(s)

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