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Proceedings Paper

Infrared Microscopy For Evaluation Of Silicon Devices And Die-Attach Bonds
Author(s): Barry G. Cohen
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Paper Abstract

Infrared Microscopy is useful for nondestructive evaluation of semiconductor materials and devices. At wavelengths near 1100 nm, silicon and GaAs have good transparency. Therefore, internal defect structures may be observed. Techniques of infrared microscopy and methods of contrast enhancement such as decoration, interference contrast, and fluorescence are discussed. Applications are presented including examples of precipitates in silicon, die attach bond defects, and strain patterns in epitaxial layers and completed devices.

Paper Details

Date Published: 26 August 1977
PDF: 7 pages
Proc. SPIE 0104, Multidisciplinary Microscopy, (26 August 1977); doi: 10.1117/12.955430
Show Author Affiliations
Barry G. Cohen, Research Devices, Inc. (United States)


Published in SPIE Proceedings Vol. 0104:
Multidisciplinary Microscopy
Robert Whitman, Editor(s)

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