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Proceedings Paper

Photomasks For Micron Geometry Transistors
Author(s): Herb G. Hasemann
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Paper Abstract

Photomasks used to produce high frequency microwave transistors have unique and different requirements than do integrated circuit photomasks. Critical dimensions have a tolerance of ± 0.2 micrometers. In most cases the critical geometry is 1.0 micrometer or less. Defect densities are very lenient as compared to integrated circuits. We inspect to a 4.0 A.Q.L. In a two-inch square array we have on the order of 8,000 to 15,000 discrete device patterns. Inspection is made on a random sample as shown on the following table.

Paper Details

Date Published: 20 September 1976
PDF: 2 pages
Proc. SPIE 0080, Developments in Semiconductor Microlithography, (20 September 1976); doi: 10.1117/12.954850
Show Author Affiliations
Herb G. Hasemann, Hewlett-Packard Company (United States)

Published in SPIE Proceedings Vol. 0080:
Developments in Semiconductor Microlithography
James W. Giffin, Editor(s)

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