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Proceedings Paper

Line Width Measurement By Diffraction Pattern Analysis
Author(s): Harvey L. Kasdan; Nicholas George
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Paper Abstract

The problem of measuring critical dimensions on photolithographic masks is becoming more acute as production linewidths dip below 2 μm. Visual techniques based on filar and image shearing eyepieces are limited by instrument resolution and operator acuity and consistency. An automatic system, based on diffraction pattern analysis, has been developed. Subjective operator judgment is not required to complete a measurement. Repeatability of 1% has been demonstrated for lines and gaps as small as 1.5 μm. The technique and device will be described and detailed experimental results will be presented. An analysis of the technique limitations shows that the current technique can easily be extended to measure the 0.5 to 1 μm widths. The ultimate potential may well be 1 microinch resolution at 1 microinch widths. Thus, diffraction pattern analysis may be the only viable alternative to the scanning electron microscope for submicrometer production line testing.

Paper Details

Date Published: 20 September 1976
PDF: 10 pages
Proc. SPIE 0080, Developments in Semiconductor Microlithography, (20 September 1976); doi: 10.1117/12.954834
Show Author Affiliations
Harvey L. Kasdan, Recognition Systems, Inc. (United States)
Nicholas George, California Institute of Technology (United States)

Published in SPIE Proceedings Vol. 0080:
Developments in Semiconductor Microlithography
James W. Giffin, Editor(s)

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