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Proceedings Paper

Surface Emitting Sources For Optical Waveguides
Author(s): Eugene G. Dierschke
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Paper Abstract

The basic design principles of radiation emitting diodes are discussed. Theoretical and experimental values of radiant power, radiant intensity, and radiance of GaAs and GaAlAs infrared surface emitting sources are reviewed. A comparison of various device geometries shows that small-area, high-radiance, etched-well emitters are the optimum design for coupling to individual optical fibers but that high-radiant-intensity shaped emitters are the optimum design for coupling to larger diameter fiber bundles. Improved linearity can be achieved with GaAlAs planar emitters incorporating a buried-junction structure to minimize non-radiative surface recombination.

Paper Details

Date Published: 6 November 1975
PDF: 9 pages
Proc. SPIE 0063, Guided Optical Communications, (6 November 1975); doi: 10.1117/12.954476
Show Author Affiliations
Eugene G. Dierschke, Texas Instruments Incorporated (United States)

Published in SPIE Proceedings Vol. 0063:
Guided Optical Communications
Frank L. Thiel, Editor(s)

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