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Proceedings Paper

The Spatial Variation Of Carrier Lifetime In Silicon Measured With An Optical Beam
Author(s): D. L. Lile; N. M. Davis
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Paper Abstract

An optical method for measuring the carrier recombination time in semiconductors is described. In particular, this method allows for the measurement of lifetime with high spatial resolution. Results are presented which demonstrate the capabilities of the technique and illustrate its application to the detection and characterization of defects.

Paper Details

Date Published: 20 January 1976
PDF: 5 pages
Proc. SPIE 0062, Modern Utilization of Infrared Technology I, (20 January 1976); doi: 10.1117/12.954440
Show Author Affiliations
D. L. Lile, Naval Electronics Laboratory Center (United States)
N. M. Davis, Naval Electronics Laboratory Center (United States)


Published in SPIE Proceedings Vol. 0062:
Modern Utilization of Infrared Technology I
Irving J. Spiro, Editor(s)

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