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Proceedings Paper

Sub-Half Micron Lithography with Excimer Laser
Author(s): Yasushi Tanaka; Minoru Takeda; Masao Saito; Takashi Kasuga; Toshiro Tsumori
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Paper Abstract

The life of optical lithography has been prolonged by introducing Deep UV sources and its limit seems to be in the sub-half-micron to quarter-micron region. In Deep UV lithography, KrF excimer laser lithography is the most promising technique for the next generation. We have evaluated the resolution capability of a KrF excimer laser stepper using a conventional novolac-type resist. With this combination, it has been shown that an alkaline treatment is an effective method of improving the resist profile, which means that a conventional resist is applicable to excimer laser lithography. The mechanism of resist profile improvement is also discussed. We assert that a kind of chemical reaction is caused during the PEB step under certain conditions.

Paper Details

Date Published: 25 July 1989
PDF: 13 pages
Proc. SPIE 1088, Optical/Laser Microlithography II, (25 July 1989); doi: 10.1117/12.953177
Show Author Affiliations
Yasushi Tanaka, SONY Corp. (Japan)
Minoru Takeda, SONY Corp. (Japan)
Masao Saito, SONY Corp. (Japan)
Takashi Kasuga, SONY Corp. (Japan)
Toshiro Tsumori, SONY Corp. (Japan)


Published in SPIE Proceedings Vol. 1088:
Optical/Laser Microlithography II
Burn Jeng Lin, Editor(s)

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