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Proceedings Paper

Image Reversal Process Using PR1024MB Photo Resist By KrF Excimer Laser Lithography
Author(s): A. Tokui; A. Fukui; K. Tsukamoto; Y. Akasaka
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Paper Abstract

PR1024MB photo resist, one of the novolac based positive type resist for i-line lithography, showed nonreciprocal behavior under the condition of high power KrF excimer laser exposure, and a negative type reaction was induced. This reaction was accelerated by an additional reversal bake and a flood exposure, which were well known technique as image reversal process for g-line and i-line lithography. In the image reversal process with KrF excimer, it was observed that the sensitivity became higher as the reversal bake temperature increased. Furthermore, the change in resist pattern profile from undercutting shape to rectangular form was observed with the increase of reversal bake temperature. However this image reversal process required a higher exposure dose because of its nonlinear reaction, the resist pattern profiles obtained were much better than the triangular shape formed by the normal positive type reaction. The dependence of resist pattern profile and sensitivity on flood exposure wavelength and energy was quite small. It was concluded that the key parameter of this process was the reversal bake temperature, and fine patterns less than 0.5 um with steep sidewall were obtained by optimizing the process conditions.

Paper Details

Date Published: 25 July 1989
PDF: 9 pages
Proc. SPIE 1088, Optical/Laser Microlithography II, (25 July 1989); doi: 10.1117/12.953175
Show Author Affiliations
A. Tokui, Mitsubishi Electric Corporation (Japan)
A. Fukui, Mitsubishi Electric Corporation (Japan)
K. Tsukamoto, Mitsubishi Electric Corporation (Japan)
Y. Akasaka, Mitsubishi Electric Corporation (Japan)

Published in SPIE Proceedings Vol. 1088:
Optical/Laser Microlithography II
Burn Jeng Lin, Editor(s)

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