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Proceedings Paper

Improvement Of The Transfer-Efficiency Of A Junction CCD By Modifying The Diffusion-Mask Configuration
Author(s): Antonius J. G. Spiekerman; Gertjan L. Ouwerling
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Paper Abstract

In a Junction Charge-Coupled Device (CCD) electrons can be trapped in parasitic energy wells near the edge of the channel. This results in a low transfer-efficiency. These parasitic energy wells can be diminished by a change of the confinement. This was materialized by simply modifying the shallow p-type diffusion mask. The result was a reduction in the transfer-inefficiency by a factor of ten.

Paper Details

Date Published: 25 July 1989
PDF: 8 pages
Proc. SPIE 1088, Optical/Laser Microlithography II, (25 July 1989); doi: 10.1117/12.953163
Show Author Affiliations
Antonius J. G. Spiekerman, Delft University of Technology (The Netherlands)
Gertjan L. Ouwerling, Delft University of Technology (The Netherlands)


Published in SPIE Proceedings Vol. 1088:
Optical/Laser Microlithography II
Burn Jeng Lin, Editor(s)

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