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Proceedings Paper

Optimization and Characterization of Single Layer Resist Techniques for 1 Am CMOS Production
Author(s): Martin P. Karnett; Mary C. Sarnoff
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Paper Abstract

A resist evaluation was performed to select a high resolution positive resist which would meet all the requirements for 1µm CMOS technology. The leading resists in the 1µm evaluation were further evaluated as replacements for an existing production gate imaging process employing CEM. The methodology used in the evaluation will be described with particular emphasis on gate and metal imaging.

Paper Details

Date Published: 25 July 1989
PDF: 15 pages
Proc. SPIE 1088, Optical/Laser Microlithography II, (25 July 1989); doi: 10.1117/12.953160
Show Author Affiliations
Martin P. Karnett, Raytheon Company (United States)
Mary C. Sarnoff, Raytheon Company (United States)


Published in SPIE Proceedings Vol. 1088:
Optical/Laser Microlithography II
Burn Jeng Lin, Editor(s)

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