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Proceedings Paper

Moire Alignment Technique For Projection Photolithographic System
Author(s): Dai Sugimoto; Seiichiro Kimura; Tsutomu Nomura; Yoshiyuki Uchida; Shuzo Hattori
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Paper Abstract

We are developing a projection moire alignment technique in order to obtain an alignment accuracy of better than 0.1μm(3σ) using simple alignment optics in a projection photolitographic system.[1] Chromatic aberration between the exposure light(g-line) and the alignment light(He-Ne Laser) was compensated using fundamental moire theory without compricated optical unit. The beam pointing stability of He-Ne laser has affected an alignment accuracy. By taking reference beam befor incident on the wafer, we have removed this problem. We obtained an alignment accuracy of 0.07μm in resist mark and 0.10μm in Si etched mark.

Paper Details

Date Published: 25 July 1989
PDF: 10 pages
Proc. SPIE 1088, Optical/Laser Microlithography II, (25 July 1989); doi: 10.1117/12.953153
Show Author Affiliations
Dai Sugimoto, Nippon Seiko K.K. (Japan)
Seiichiro Kimura, Nippon Seiko K.K. (Japan)
Tsutomu Nomura, Nippon Seiko K.K. (Japan)
Yoshiyuki Uchida, Aichi Institute of Technology (Japan)
Shuzo Hattori, Nagoya Univ. (Japan)

Published in SPIE Proceedings Vol. 1088:
Optical/Laser Microlithography II
Burn Jeng Lin, Editor(s)

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